Native-oxide stripe-geometry In0.5(Al<i>x</i>Ga1−<i>x</i>)0.5P-In0.5Ga0.5P heterostructure laser diodes

Abstract

Data are presented demonstrating the formation of stable, device-quality native oxides from high Al composition In0.5(AlxGa1−x)0.5P (x ∼0.9) via reaction with H2O vapor (in N2 carrier gas) at elevated temperatures (≥500 °C). The oxide exhibits excellent current-blocking characteristics and is employed to fabricate continuous room-temperature stripe-geometry In0.5(AlxGa1−x)0.5P-In0.5Ga0.5P double-heterostructure laser diodes.