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Comment on ‘‘Raman scattering with nanosecond resolution during pulsed laser annealing of silicon’’ [Appl. Phys. Lett. <b>4</b> <b>1</b>, 700 (1982)]

D. von der Linde, G. Wartmann, A. Compaan

Applied Physics Letters · 1983 · 15 citations · 5 references

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5

Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures

G. E. Jellison, F. A. Modine · Applied Physics Letters · 1982 · 292 citations

, , +17

Raman Measurement of Lattice Temperature during Pulsed Laser Heating of Silicon

H. W. Lo, A. Compaan · Physical Review Letters · 1980 · 207 citations

, , +17

Resonant Raman scattering in silicon

J. B. Renucci, R.N. Tyte, M. Cardona · Physical review. B, Solid state · 1975 · 206 citations

, , +17

Time-reversal invariance and Raman measurements of phonon populations under nonequilibrium conditions

A. Compaan, H. W. Lo, M. C. Lee · Physical review. B, Condensed matter · 1982 · 29 citations

, , +16

Raman scattering with nanosecond resolution during pulsed laser annealing of silicon

D. von der Linde, G. Wartmann · Applied Physics Letters · 1982 · 29 citations

, , +17