Position of the Band Edges of Silicon under Uniaxial Stress

Abstract

Schottky barrier heights of metal-silicon contacts have been measured as a function of temperature at high uniaxial 〈111〉 stress (100 kbar). The change in band gap, as compared to the zero-pressure band gap, can be attributed to a change in position of the conduction band edge alone, i.e., a change in electron affinity.