Japanese Journal of Applied Physics · 1986 · 18 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsLaser DiodesLaser PhysicsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersAtmospheric PressureDiode Laser Threshold CurrentDouble Heterostructure DevicesDouble HeterostructuresHeterostructure DevicesHeterostructure LasersSemiconductor Laser DiodesSemiconductor Laser Fabrication
This paper presents the first successful application of a selective MOCVD growth to fabrication of a planar buried heterostructure laser diode. Double heterostructure of GaAs/AlGaAs laser was grown at atmospheric pressure, and the second-step selective growth for making a burying AlGaAs semi-insulating layer was carried out at low pressure. Resistivity of the undoped AlGaAs layer, controlled by changing V/III ratio, was more than 10 7 Ω·cm at V/III=100. The lasing wavelength was 879 nm and the threshold current of CW operation was 20 mA at room temperature.
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