Journal of Applied Physics · 1987 · 11 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDefects In Electronic MaterialsDislocations In SemiconductorsEpitaxial GrowthSemiconductor DefectsSemiconductor PhysicsAmpoule SealsAnomalous TransportDeep-level DefectsDislocation PhysicsDislocation-impurity InteractionsElectrical Transport PropertiesLiquid Phase EpitaxyX-ray Topography
Cd(x)Hg(1−x)Te with x=0.23 was grown on CdZnTe substrates by liquid-phase epitaxy and annealed in a sealed ampoule under controlled Hg pressure. The anomalous behavior found in the electrical transport data of some layers is correlated with defects observed in x-ray topography measurements.
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