280-GHz schottky diode detector in 130-nm digital CMOS

Abstract

A 2 × 2 array of Schottky-barrier diode detectors with an on-chip patch antenna and a preamplifier is fabricated in a 130-nm logic CMOS process. Each detector cell can detect the 25-kHz modulated 280-GHz radiation signal with a measured responsivity and noise equivalent power (NEP) of 21kV/W and 360pW/√Hz, respectively. At 4-MHz modulation frequency, NEP should be about 40pW/√Hz. At supply voltage of 1.2V, the detector consumes 1.6mW. By utilizing the detector, a millimeter-wave image is constructed, demonstrating its potential application in millimeter-wave and THz imaging.