Applied Physics Letters · 1992 · 59 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySurface ChemistrySurface ScienceSurface Chemistry Of SolidsSurface CrystallographySurface PassivationSurface PhysicsX-ray CrystallographyX-ray DiffractionAtomic Position DeterminationNear-edge X-ray Absorption Fine Structure SpectroscopyPolarized X-ray SpectroscopyTetrahedral CoordinationX-ray Absorption Near Edge StructureX-ray Absorption Spectroscopy
X-ray absorption near-edge structure (XANES) is used to determine the structure of the S-passivated InP(100)-(1×1) surface. From photon electric polarization-dependent XANES studies, we found that S forms a bridge bond with two In atoms along the [011] direction, with an In-S-In bond angle of 100°. The atomic position of S is found to be close to the tetrahedral site of a phosphorous vacancy.
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Nearly ideal electronic properties of sulfide coated GaAs surfaces
Eli Yablonovitch, C. J. Sandroff, R. Bhat et al. · Applied Physics Letters · 1987 · 338 citations
Natural Sciences, Materials Engineering, Materials Science +17
Sulfur as a surface passivation for InP
R. Iyer, R. Chang, D. L. Lile · Applied Physics Letters · 1988 · 145 citations