Incorporation and activation of group V elements in MOVPE-grown CdxHg1-xTe

A new MOVPE technique for the growth of highly uniform CMT

Jon Tunnicliffe, S.J.C. Irvine, O. D. Dosser et al. · Journal of Crystal Growth · 1984 · 223 citations

Engineering, Materials Engineering, Materials Science +2

Defects, diffusion and activation in ion implanted HgCdTe

L. O. Bubulac · Journal of Crystal Growth · 1988 · 108 citations

Engineering, Materials Engineering, Materials Science +9

Effects of annealing on the electrical properties of Cd<i>x</i>Hg1−<i>x</i>Te

C. L. Jones, M.J.T. Quelch, P. Capper et al. · Journal of Applied Physics · 1982 · 103 citations

Natural Sciences, Materials Engineering, Materials Science +15

Non-equilibrium modes of operation for infrared detectors

T. Ashley, C.T. Elliott, A.T. Harker · Infrared Physics · 1986 · 93 citations

Natural Sciences, Electrical Engineering, Physics +14

The behaviour of selected impurities in CdxHg1−xTe

P. Capper · Journal of Crystal Growth · 1982 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +9