Photothermal Characterization of Electrochemical Etching Processed n-Type Porous Silicon

Abstract

The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of ${\mathrm{SiO}}_{2}$ in the composition of porous silicon material.