Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 15 citations · 0 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingEpitaxial GrowthNanoelectronicsQuantum WellsSemiconductor PhysicsTwo-dimensional SemiconductorsCarrier Transport In Quantum WellsElectron DensityElectron MobilityQuantum Well Band StructureQuantum Well GrowthQuantum Well StructuresTransport In Quantum WellsTwo-dimensional Electron Systems
We report the realization of two-dimensional electron systems in InSb quantum wells. AlxIn1−xSb barriers were selectively δ-doped with Si to produce electron densities between 0.9×1011 and 4×1011 cm−2 with electron mobilities as high as 97 000 cm2/V s at 4.2 K. A decrease in the electron density and an increase in the electron mobility are observed when the distance between the quantum well and the dopants is increased.