Review of Scientific Instruments · 1997 · 34 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceAnalytical ChemistryElemental AnalysisInstrumentationDetector SystemsElectron MicroscopyRadiation DetectorsSemiconductor DetectorsX-ray DetectionX-ray DetectorsCollection EfficiencyDetector Energy ResolutionElectron Probe MicroanalysisElemental MappingFull Width At Half MaximumMicroanalysisRadiation Energy ResolutionSilicon Drift Detectors
A detection system made with a silicon drift detector cooled by a Peltier element has been designed and tested. This system has been conceived to be implemented in electron probe microanalyzers for the x-ray microanalysis of the specimen. The good energy resolution of the detector, 155 eV full width at half-maximum at the Mn–Kα line, obtained at moderately low temperature (−15 °C) by a small single-stage Peltier cooler, let this module be used in many applications in place of a standard Si(Li) detector, without the need of a liquid-nitrogen cryostat and with a good geometrical collection efficiency. Also, the particularly low values of shaping time (<2 μs) used for optimum energy resolution suggest the use of this system in operations with high counting rates (>30 000 counts/s) like, for example, fast scannings for elemental mapping. The module has been implemented in an electron microscope and the test results are reported in the article.
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Semiconductor drift chambers for position and energy measurements
P. Řehák, E. Gatti, A. Longoni et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1985 · 136 citations
Engineering, Electrical Engineering, Nuclear Engineering +13
Implanted silicon JFET on completely depleted high-resistivity devices
V. Radeka, P. Rahek, S. Rescia et al. · IEEE Electron Device Letters · 1989 · 107 citations
Engineering, Electrical Engineering, Electronic Materials +16