Theory of Transient Phenomena in the Transport of Holes in an Excess Semiconductor

Abstract

An analysis is given of the transient behavior of the density of holes n <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</inf> in an excess semiconductor as a function of lime t and of position x with respect to the electrode from which they are being injected. When the geometry is one-dimensional, an exact solution for the function n <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</inf> (x, t) can he constructed, provided certain simplifying assumptions are fulfilled, of which the most important are that there be no appreciate trapping of holes or electrons and that diffusion be negligible. An attempt is made to estimate the range of conditions over which the neglect of diffusion will be justified. A few applications of the theory to possible experiments are discussed.