Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing

Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

P. B. Joyce, T. J. Krzyzewski, Gavin R. Bell et al. · Physical review. B, Condensed matter · 1998 · 296 citations

Natural Sciences, Materials Science, Physics +17

Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots

Shijie Xu, X. C. Wang, S. J. Chua et al. · Applied Physics Letters · 1998 · 190 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Independent manipulation of density and size of stress-driven self-assembled quantum dots

I. Mukhametzhanov, R. Heitz, Jing Zeng et al. · Applied Physics Letters · 1998 · 177 citations

Natural Sciences, Materials Engineering, Materials Science +16

Strain-engineered InAs/GaAs quantum dots for long-wavelength emission

Eric C. Le Ru, P. Howe, T.S. Jones et al. · Physical review. B, Condensed matter · 2003 · 172 citations

Engineering, Materials Engineering, Materials Science +17

High-Temperature Operation of InAs–GaAs Quantum-Dot Infrared Photodetectors With Large Responsivity and Detectivity

Subhananda Chakrabarti, Adrienne D. Stiff‐Roberts, P. Bhattacharya et al. · IEEE Photonics Technology Letters · 2004 · 165 citations

Engineering, Electrical Engineering, Materials Science +17