P. Howe

Strain-engineered InAs/GaAs quantum dots for long-wavelength emission

Eric C. Le Ru, P. Howe, T.S. Jones et al. · Physical review. B, Condensed matter · 2003 · 172 citations

Semiconductors, Electrical Engineering, Optical Materials +14

Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots

P. Howe, Eric C. Le Ru, Edmund Clarke et al. · Journal of Applied Physics · 2004 · 52 citations

Materials Science, Atomic Force Microscopy, Ii-vi Semiconductor +14

Quantification of segregation and strain effects in InAs∕GaAs quantum dot growth

P. Howe, Eric C. Le Ru, Edmund Clarke et al. · Journal of Applied Physics · 2005 · 34 citations

Engineering, Semiconductor Nanostructures, Semiconductors +18

Strain-interactions between InAs/GaAs quantum dot layers

P. Howe, Brian Abbey, Eric C. Le Ru et al. · Thin Solid Films · 2004 · 33 citations

Compound Semiconductor, Applied Physics, Physics +1

Theoretical analysis of strain and strain decay in InAs∕GaAs(001) multilayer quantum dot growth

Stanko Tomić, P. Howe, N. M. Harrison et al. · Journal of Applied Physics · 2006 · 26 citations · Full text

Engineering, Various Strain Components, Semiconductor Nanostructures +17