Strain-engineered InAs/GaAs quantum dots for long-wavelength emission

Eric C. Le Ru, P. Howe, T.S. Jones, +1

Physical review. B, Condensed matter

SemiconductorsElectrical EngineeringOptical MaterialsEngineeringLong Wavelength Emission +12

Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots

P. Howe, Eric C. Le Ru, Edmund Clarke, +3

Journal of Applied Physics

Materials ScienceAtomic Force MicroscopyIi-vi SemiconductorTemperature-controlled NucleationEngineering +12

Quantification of segregation and strain effects in InAs∕GaAs quantum dot growth

P. Howe, Eric C. Le Ru, Edmund Clarke, +2

Journal of Applied Physics

EngineeringSemiconductor NanostructuresSemiconductorsCritical Thickness θCritQuantum Dots +16

Strain-interactions between InAs/GaAs quantum dot layers

P. Howe, Brian Abbey, Eric C. Le Ru, +2

Thin Solid Films

Compound SemiconductorApplied PhysicsPhysicsSemiconductor Nanostructures

Theoretical analysis of strain and strain decay in InAs∕GaAs(001) multilayer quantum dot growth

Stanko Tomić, P. Howe, N. M. Harrison, +1

Journal of Applied Physics

EngineeringVarious Strain ComponentsSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor +15

Persistent template effect in InAs/GaAs quantum dot bilayers

Edmund Clarke, P. Howe, Matthew W. Taylor, +7

Journal of Applied Physics

Ii-vi SemiconductorElectrical EngineeringOptical MaterialsHigh Density BilayersEngineering +12

Growth, optical properties and device characterisation of InAs/GaAs quantum dot bilayers

Edmund Clarke, Peter Spencer, Edmund Harbord, +2

Journal of Physics Conference Series

Ground State LasingPhotonicsIi-vi SemiconductorOptical MaterialsEngineering +12

Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers

M. A. Majid, David Childs, Hifsa Shahid, +8

IEEE Journal of Selected Topics in Quantum Electronics

1550-Nm Gaas-based LasersPhotonicsStrain InteractionsEngineeringPhysics +8

Indium segregation during multilayer InAs/GaAs(001) quantum dot formation

P. Howe, Eric C. Le Ru, R. Murray, +1

Journal of Crystal Growth

EngineeringPhysicsApplied PhysicsQuantum MaterialsQuantum Dot Formation +2

Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters

Eric C. Le Ru, P. Howe, Tim S. Jones, +1

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

SemiconductorsMaterials ScienceInas/gaas Quantum DotsIngaas CappingEngineering +12