T.S. Jones

Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

P. B. Joyce, T. J. Krzyzewski, G. R. Bell et al. · Physical review. B, Condensed matter · 2000 · 211 citations

Natural Sciences, Materials Engineering, Materials Science +17

Strain-engineered InAs/GaAs quantum dots for long-wavelength emission

Eric C. Le Ru, P. Howe, T.S. Jones et al. · Physical review. B, Condensed matter · 2003 · 172 citations

Engineering, Materials Engineering, Materials Science +17

Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy

J. G. Belk, C. F. McConville, J. L. Sudijono et al. · Surface Science · 1997 · 128 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +13

The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces

A. R. Avery, D.M Homes, J. L. Sudijono et al. · Surface Science · 1995 · 122 citations

Natural Sciences, Materials Engineering, Materials Science +14

Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots

P. B. Joyce, T. J. Krzyzewski, G. R. Bell et al. · Applied Physics Letters · 2001 · 98 citations

Natural Sciences, Materials Engineering, Materials Science +17