Observation of near-band-gap luminescence from boron nitride films

Abstract

We report results from cathodoluminescence spectroscopy of boron nitride films grown on Si(100) substrates by ion-source-assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near-band-gap region for hexagonal boron nitride films at energies of 4.90, 5.31, and 5.50 eV. We also report deep-level emission spectra of predominantly cubic boron nitride films which are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.