A new high speed I/sup 2/L structure

Abstract

A new improved I/SUP 2/L structure is discussed which has been shown to operate at high speeds with large fan-out capabilities while retaining low power operation. The new `up-diffused' structure is fabricated in such a fashion that Schottky diodes can be readily incorporated. With the addition of Schottky clamps between the collector and base of the n-p-n switching transistor, gate delays as low as 2.5 ns have been achieved.