Characteristics of Luminescence from InSb Magneto-Infrared-Emitting Diode

Abstract

Utilizing the magnetoconcentration effect due to the Lorentz force in an electron-hole plasma of intrinsic InSb, we have first succeeded in generating an infrared emission having wavelength corresponding to the energy gap with intensity exceeding ∼30 mW/cm 2 at room temperature with fairly high efficiency. The principle is quite different from usual LED utilizing p - n junction, and so the magneto-diode is especially useful for generation of light with wavelength longer than ∼2 µm at room temperature.