Applied Physics Letters · 1988 · 15 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesIntegrated OpticsIon ImplantationLaser PhysicsOptical SourcesPhotonic Integrated CircuitsSemiconductor LasersDistributed Bragg Reflector LasersDistributed Feedback LasersFeedbackIntegrated LasersIntegrated Semiconductor LasersLasersSingle-mode OperationWavelength Tuning
We report for the first time, the performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR). Stripes of Si++ with a period of 2300 Å and a dose ∼1014 cm−2 are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 °C are obtained. The wavelength tuning rate with temperature is 0.8 Å/°C. The coupling coefficient is estimated to be 15 cm−1. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
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