High-performance mid-infrared quantum dot infrared photodetectors

Abstract

Quantum dot infrared photodetectors (QDIPs) have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on intersublevel transitions in quantum dots (QDs). Three-dimensional quantum confinement offers the advantages of normal incidence operation, low dark currents and high-temperature operation. The performance characteristics of mid-infrared devices with three kinds of novel heterostructures in the active region are described here. These are a device with upto 70 QD layers, a device with a superlattice in the active region, and a tunnel QDIP. Low dark currents (1.59 A cm−2 at 300 K), large responsivity (2.5 A W−1 at 78 K) and large specific detectivity (1011 cm Hz1/2 W−1 at 100 K) are measured in these devices. It is evident that QDIPs will find application in the design of high-temperature focal plane arrays. Imaging with small QD detector arrays using the raster scanning technique is also demonstrated.