Electronics Letters · 1975 · 26 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave MixersNoise In Electronic DevicesNoise In Semiconductor DevicesRadio-frequency Integrated CircuitsGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsGaas OscillatorsGallium ArsenideIntegrated Circuit MixersLow-noise MixersMixersPower Output
Experimental results obtained with GaAs f.e.t. oscillators at X band are described. It is demonstrated that the output power of f.e.t. oscillators is sufficient to drive X band mixers. The noise measure of these oscillators is competitive with Gunn devices, and can be reduced further.