Applied Physics Letters · 1979 · 80 citations · 10 references
EngineeringMaterials SciencePhysicsOptoelectronicsSemiconductor MaterialsSolid State PhysicsOptical Properties Of SemiconductorsQuantum ConfinementQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCarrier Transport In Quantum WellsHeterostructure DevicesHeterostructure LasersQuantum Well Band StructureQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresTwo-dimensional Semiconductor Heterostructures
Laser operation (4.2–300 °K) of multiple-quantum-well AlxGa1−xAs-GaAs heterostructures on a phonon (LO) sideband ∼36 meV below the lowest confined-particle transitions is described. Phonon-sideband laser data are presented on two different metalorganic chemical-vapor-deposited (MO-CVD) quantum-well heterostructures with four GaAs active regions (Lz∼50 and ∼90 Å) coupled by three AlxGa1−xAs (x∼0.35) barriers.
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Carrier collection in a semiconductor quantum well
H. Shichijo, R. M. Kolbas, N. Holonyak et al. · Solid State Communications · 1978 · 125 citations