Floating-Gate Corner-Enhanced Poly-to-Poly Tunneling in Split-Gate Flash Memory Cells

Abstract

The poly-to-poly tunneling characteristics in the third-generation SuperFlash memory cell have been analyzed. It has been demonstrated that, even without a sharp floating-gate (FG) tip, the cell still demonstrates the main features of the erase process from previous SuperFlash generations, namely, corner (tip)-enhanced tunneling, asymmetry of the tunneling voltage in forward and reverse directions, strong localization of the tunneling process, and effective suppression of anode hole injection. Furthermore, a new method for measuring the tunneling voltage on a regular FG cell is described. The reliability aspects of corner-enhanced tunneling in the SuperFlash cell are also discussed.