Multilayer Theory of Correction Factors for Spreading-Resistance Measurements

Abstract

The spreading‐resistance technique has shown the versatility of determining either the thickness of diffused or epitaxial layers or establishing the impurity profiles for various multilayered silicon structures. However, correction factors must be applied to the measured spreading‐resistance values in order to get the corrected resistivities. The calculation for the correction factors based on the unilayer step‐junction theory has been reported previously by the authors. In this paper, the calculation of the correction factors based on the multilayer step‐junction theory and the utilization of a computer for such calculations are presented.