Redistribution of implanted H in annealings of <i>n</i>-type GaAs

Abstract

Depth profiles of 60- and 100-keV protons implanted at room temperature to fluences of 1016 and 1017 H+ ions/cm2 in Si-doped n-type GaAs have been obtained using ion beam techniques. The profiles of H have been measured as a function of annealing temperature up to 820 K. The redistribution of implanted H is observed to depend on the migration of implantation-induced defects. The migration of H-atom-defect complexes is approximated by an Arrhenius process with an activation energy of 2.16±0.15 eV and a preexponential factor of 2×105 cm2/s.