Applied Physics Letters · 1972 · 157 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOpticsOptoelectronicsSemiconductor MaterialsIntegrated OpticsIon ImplantationOptical Properties Of SemiconductorsOptical WaveguidesPhotonic Integrated CircuitsIntegrated WaveguidesOptical Confinement StructuresWaveguide DesignWaveguide FabricationWaveguiding
We have produced optical waveguides in n-type GaAs by implantation with 300-keV protons. The guiding is shown to be due to the elimination of charge carriers from the implanted region. Annealing of the waveguide leads to very large reductions in the 1.15-μ guided-wave absorption.
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Isolation of junction devices in GaAs using proton bombardment
A.G. Foyt, W.T. Lindley, C. M. Wolfe et al. · Solid-State Electronics · 1969 · 175 citations