Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition

Abstract

Using a triode plasma-enhanced chemical vapor deposition (PECVD) system and high H2 dilution of SiH4 (down to a SiH4/H2 gas flow ratio of 0.33/99), amorphous-layer-free μc-Si:H has been successfully grown on insulating glass substrates in the continuous PECVD growth mode. It is demonstrated that an ultrathin layer of such μc-Si:H can serve as a seed layer to facilitate an epitaxial-like growth of μc-Si:H (seeded growth).