Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1995 · 20 citations · 0 references
EngineeringPhysicsDose-response ModelingPlasma PhysicsSemiconductor DevicesEtching ProcessesIon ImplantationDose Rate EstimationDose-time RelationshipIon Implantation SimulationPlasma EtchingPlasma Immersion Ion ImplantationTotal Dose
Etching and deposition rates of silicon and SiO2 during BF3 plasma immersion ion implantation are measured. The relation between total dose and plasma immersion ion implantation processing time is developed through computer modeling. The results are in very good agreement with the experimental data. Comparison with a previously published model is also given.