Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

InAs/GaInSb superlattices as a promising material system for third generation infrared detectors

Antoni Rogalski, Piotr Martyniuk · Infrared Physics & Technology · 2005 · 145 citations

Engineering, Materials Engineering, Materials Science +15

Chemical and electronic properties of sulfur-passivated InAs surfaces

Dmitri Y. Petrovykh, M. J. Yang, L. J. Whitman · Surface Science · 2003 · 126 citations

Natural Sciences, Materials Engineering, Materials Science +14

Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y

Robert Rehm, Martin Walther, F. Fuchs et al. · Applied Physics Letters · 2005 · 111 citations

Engineering, Materials Engineering, Materials Science +17

MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

Jean‐Baptiste Rodriguez, Philippe Christol, L. Cerutti et al. · Journal of Crystal Growth · 2004 · 106 citations

Natural Sciences, Materials Science, Physics +16

Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

Aaron Gin, Yajun Wei, Andrew Hood et al. · Applied Physics Letters · 2004 · 98 citations

Engineering, Electrical Engineering, Materials Science +17