Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y

Abstract

An approach for the passivation of photodiodes based on compounds of the InAs∕GaSb∕AlSb materials family is presented. The passivation is realized by the overgrowth of patterned mesa devices with a quaternary AlxGa1−xAsySb1−y layer, lattice matched to the GaSb substrate. Proof of concept is demonstrated on infrared photodiodes based on InAs∕(GaIn)Sb superlattices with 10μm cutoff wavelength operating at 77 K where suppression of surface leakage currents is observed.