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Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation
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1996
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EngineeringSi/sio2 Interface DefectsSingle Ion IrradiationIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceIon ImplantationGeneration RatesQuantitative AnalysisElectrical EngineeringPhysicsBias Temperature InstabilitySingle Event EffectsN-ch MosfetSemiconductor Device FabricationDefect FormationMicroelectronicsSilicon DebuggingApplied Physics
Generation rates of Si/SiO2 interface defects, namely, the oxide trapped holes and the interface states, by MeV He single ion irradiation have been investigated quantitatively. From the analysis of threshold voltage shifts induced by single ions of 2 MeV He, the number of the oxide trapped holes and the interface states induced in an n-ch MOSFET in CMOS4007 by a single ion have been estimated to be about 28 and 9, respectively. The hole trapping efficiency is almost 100% at the ion dose below 1 ions/ μm2.