Japanese Journal of Applied Physics · 1987 · 10 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportSemiconductor DefectsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsCarrier ConcentrationConcentrationHot Carrier EffectsInterstitialsSchottky BarriersSchottky DefectsTrap CharacterizationTrap Levels
DLTS measurements were carried out on Schottky barriers formed on the surfaces of n -CdTe:In crystals heated in argon gas. Four electron trap levels were detected. The carrier concentration near the surface decreased to less than a tenth as a result of heat treatments at 350 or 400°C for 1 hour. A sample heated at 400°C showed a steep decrease in the carrier concentration near the surface. The concentration of an electron trap level ( E C - E T =0.34 eV) was reduced by heat treatments. Heat treatments at temperatures higher than 350°C for 1 hour seemed to induce some defects related to cadmium vacancies or tellurium interstitials, which compensate donors and reduce the concentration of the trap level near the surfaces of CdTe.
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