Optimized growth conditions of GaN epitaxial layers

Abstract

Abstract Optimized growth conditions of the epitaxial GaN layers on the (0001) oriented sapphire substrates in the Ga/HCl/NH 3 /H 2 system have been proposed. The corresponding growth rate varied about the value 0.5 μm · min −1 . The study of surface morphology and X‐ray diffraction have confirmed the single crystalline character of the layers even though the surface shows a faceted structure. The c / a ratio calculated from our measured data of the lattice parameters was found 1.624 which is relatively close to the ideal close‐packed wurtzite structure value. The cathodoluminescent spectra of the layers with a sufficient thickness were characterized by a peak at 3.35 eV having a halfwidth of about 0.2 eV.