Journal of Applied Physics · 2010 · 19 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsMaterials ChemistryFerromagnetic MaterialsFerromagnetismMagnetic AnisotropyMagnetic Properties Of SolidsMagnetic Thin FilmsSpintronicsAnnealing Temperature EffectsHysteresisHysteresis LoopsMagnetic Materials CharacterizationMagnetic Tunnel JunctionsPerpendicular Magnetic AnisotropyTunneling MagnetoresistanceX-ray Reflectivity
Perpendicular magnetic tunnel junctions (pMTJs) with tunneling magnetoresistance (TMR) as high as 14.7% at room temperature were fabricated. The continuous film and pMTJs with Co/Pt multilayer magnetic electrodes and AlOx tunnel barrier were annealed at different temperatures and the effect of annealing on their properties was investigated. The hysteresis loops and X-ray reflectivity measurement show that the interdiffusion of Co and Pt atoms is slight when annealed below 523 K. However, the patterned magnetic tunnel junction gets TMR ratio from 12.3% to the maximum value of 14.7% after annealing at 483 K for 1 h.
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Shoji Ikeda, Jun Hayakawa, Yoshito Ashizawa et al. · Applied Physics Letters · 2008 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +16
Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
S. Mangin, D. Ravelosona, J. A. Katine et al. · Nature Materials · 2006 · 1.3K citations · Full text
Progress and outlook for MRAM technology
S. Tehrani, J. M. Slaughter, E. Chen et al. · IEEE Transactions on Magnetics · 1999 · 437 citations
Engineering, Computer Engineering, Electrical Engineering +9