Applied Physics Letters · 2001 · 68 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDefects In Electronic MaterialsDevice ReliabilityIntegrated Circuit DesignInterconnect TechnologyResidual StressSemiconductor ReliabilityElectrical Interconnect ReliabilityElectromigrationElectromigration AnalysisElectromigration ReliabilityInterconnect CharacterizationInterconnect ReliabilityInterconnect TestingLength Effects
Electromigration results have provided clear evidence of a short or “Blech” length effect in dual- damascene, Cu/oxide, multilinked interconnects. The test structure incorporates a repeated chain of Blech-type line elements and is amenable to failure analysis tools such as focused ion beam imaging. This large interconnect ensemble provides a statistical representation of electromigrationinduced damage in the regime where steady-state interconnect stress is manifest. Statistical analysis yields a critical length of 90 μm for interconnects with line width 0.5 μm at j=1.0×106 A/cm2 and T=325 °C.
8
Stress evolution due to electromigration in confined metal lines
M. A. Korhonen, P. Bo rgesen, K. N. Tu et al. · Journal of Applied Physics · 1993 · 733 citations
Electromigration path in Cu thin-film lines
C.‐K. Hu, R. Rosenberg, K. Y. Lee · Applied Physics Letters · 1999 · 329 citations
Natural Sciences, Materials Engineering, Materials Science +17