Journal of Applied Physics · 1999 · 24 citations · 15 references
EngineeringElectrical EngineeringPhysicsInstrumentationMicroelectronicsPlasma PhysicsCurrent DistributionCurrent-voltage CharacteristicsIon ImplantationPlasma SheathsPlasma SimulationCapacitanceIon Implantation SimulationPlasma Immersion Ion ImplantationRise TimeSecondary Electron EmissionSecondary Electron Production
This article reports on the measurement of the ion current in plasma immersion ion implantation. Our simulation results indicate that the total current peaks at the end of rise time of the applied voltage. However, our experimental data acquired using a Rogowski coil and digital oscillator show the highest current at the beginning of the voltage pulse. The discrepancy can be explained by a displacement current attributable to the changing voltage, sheath capacitance, circuit loading effects, as well as secondary electron emission.
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Model of plasma immersion ion implantation
M. A. Lieberman · Journal of Applied Physics · 1989 · 292 citations