A study on the electrical characteristic of n-ZnO/p-Si heterojunction diode prepared by vacuum coating technique

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

Engineering, Electrical Engineering, Materials Science +17

Electron transport at metal-semiconductor interfaces: General theory

R. T. Tung · Physical review. B, Condensed matter · 1992 · 1.5K citations

Engineering, Electrical Engineering, Physics +17

Schottky barrier and pn-junctionI/V plots ? Small signal evaluation

J�rgen H. Werner · Applied Physics A · 1988 · 445 citations

Engineering, Electrical Engineering, Materials Science +12

Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities

Winfried Mönch · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 441 citations

Engineering, Electrical Engineering, Materials Science +17