Laser-induced diffusion by irradiation of silicon dipped into an organic solution of the dopant

Abstract

A new method for preparation of p-n junctions is presented. It consists in dipping the silicon to be doped into an organic liquid containing the dopant and irradiating its surface through the liquid with a high-energy pulsed ruby laser. It is shown that by this treatment the dopant is driven into the crystal and that abrupt junctions with high doping levels can be realized. Using this simple technique, solar cells with AM1 efficiencies above 13% can be prepared.