Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 18 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceMicrofabricationSemiconductor DevicesThin FilmsEtching ProcessesLaser Material ProcessingLaser Surface ProcessingSilicon MaterialsThin Film EtchingThin-film DepositionDirect WritingLaser PatterningOxide Thickness ControlOxide Thickness UniformityProcess ParametersSilicon DioxideSubstrate MaterialsThermal Properties
A laser direct writing technique for forming insulating layers of silicon dioxide from an organosilicate film on various substrate materials is shown. The process resolution is a function of the thermal properties of the substrate and is shown to be 1 μm. The technique allows for a local variation in the oxide thickness by changing process parameters. The quality of the laser written layers is compared to similar films formed by conventional organosilicate processing.