IEEE Journal of Quantum Electronics · 1980 · 12 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceOpticsOptoelectronicsSemiconductor DevicesEtching ProcessesLaser DiodesLaser Material ProcessingLaser OpticsLaser PhysicsSemiconductor LasersChemical EtchingFabricationLaser Gain MaterialsLaser MaterialsSemiconductor Laser DiodesSemiconductor Laser FabricationWet Chemical EtchingWet Etching
We describe a new configuration and novel fabrication method for GaInAsP/InP DH lasers in which one of the facet mirrors is chemically etched and the other one is formed by cleaving. The etched facet is fabricated monolithically by wet chemical etching in a solution of HCl:CH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> COOH:H <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> = (1:2:1). Broad-area contact lasers of this type operating at room temperature at a wavelength of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\sim 1.3 \mu</tex> m have been demonstrated.
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Integrated GaAs-AlGaAs double-heterostructure lasers
C. E. Hurwitz, J. A. Rossi, J. J. Hsieh et al. · Applied Physics Letters · 1975 · 59 citations