Japanese Journal of Applied Physics · 1998 · 31 citations · 14 references
Natural SciencesMaterials EngineeringMaterials SciencePhysical ChemistrySurface ChemistrySurface ScienceAtomic Force MicroscopySemiconductor SurfacesSurface MorphologySurface PhysicsSurface RoughnessSurface TopographyAtomic Force Microscopy AnalysisAtomic Force Microscopy RoughnessAtomic Force Microscopy Surface AnalysisFractal GrowthFractal RoughnessPorous SiliconPorous Silicon CarbideSilicon Surface Science
Atomic force microscopy was used to measure the “roughness” exponents of the rough porous silicon surfaces formed by electrochemical anodization. It was found that the porous Si surfaces have a self-affine fractal structure characterized by roughness exponents α=0.53–0.64, fractal dimensions D =2.36–2.47 and a growth exponent β=0.24 ±0.02.
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Dynamic Scaling of Growing Interfaces
Mehran Kardar, Giorgio Parisi, Yi-Cheng Zhang · Physical Review Letters · 1986 · 5.4K citations