First principles calculation of Indium migration barrier energy on an InAs(001) surface

Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

Qianghua Xie, A. Madhukar, Ping Chen et al. · Physical Review Letters · 1995 · 1.3K citations

Natural Sciences, Materials Science, Condensed Matter Physics +16

Strain-engineered self-assembled semiconductor quantum dot lattices

H. Lee, J. A. Johnson, M. Y. He et al. · Applied Physics Letters · 2001 · 129 citations

Natural Sciences, Materials Engineering, Materials Science +17

Equilibrium Model of Bimodal Distributions of Epitaxial Island Growth

Robert E. Rudd, G. Andrew D. Briggs, A. P. Sutton et al. · Physical Review Letters · 2003 · 72 citations

Natural Sciences, Materials Science, Physics +17

Patterned self-assembly of one-dimensional arsenic particle arrays in GaAs by controlled precipitation

R.A. Kiehl, M. Yamaguchi, Osamu Ueda et al. · Applied Physics Letters · 1996 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +17

First-Principle Calculation of Migration Processes of As during Growth on GaAs(001)

K. Seino, Akira Ishii, T. Kawamura · Japanese Journal of Applied Physics · 2000 · 18 citations

Engineering, Materials Engineering, Materials Science +17