Fabrication of ZnS/(ZnSe)n/ZnS single quantum well structures and photoluminescence properties

Luminescence linewidths of excitons in GaAs quantum wells below 150 K

Johnson Lee, Emil S. Köteles, M. O. Vassell · Physical review. B, Condensed matter · 1986 · 479 citations

Natural Sciences, Physics, Condensed Matter Physics +16

Elementary theory of heterojunctions

Walter A. Harrison · Journal of Vacuum Science and Technology · 1977 · 476 citations

Natural Sciences, Materials Science, Physics +17

Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

Takafumi Yao, Toshihiko Takeda · Applied Physics Letters · 1986 · 189 citations

Engineering, Electrical Engineering, Materials Science +17

Theory of photoluminescence line shape due to interfacial quality in quantum well structures

Jasprit Singh, K. K. Bajaj, S. Chaudhuri · Applied Physics Letters · 1984 · 179 citations

Natural Sciences, Materials Science, Physics +17

Wide-gap II-VI superlattices

L. A. Kolodziejski, R. L. Gunshor, N. Ōtsuka et al. · IEEE Journal of Quantum Electronics · 1986 · 93 citations

Engineering, Materials Engineering, Materials Science +17