Physical Review Letters · 1976 · 67 citations · 12 references
Natural SciencesChemistryPhysicsElectronic MaterialsSemiconductor MaterialsSpectroscopyElectronic Band StructureElectronic Excited StatesLuminescent MaterialsWide Band Gap SemiconductorsBand Gap DeterminationBand Gap EnergyEnergy Band GapExcited Electronic StatesExcited StatesExciton SpectroscopyLow-band-gap SemiconductorsSemiconductor Band Gap Determination
Luminescence excitation spectroscopy of donor-acceptor pair recombination in GaP is reported. We observe $s$ and $p$ excited states of C, Mg, and Zn acceptors, and deduce acceptor binding energies and Luttinger valence-band parameters (${\ensuremath{\gamma}}_{1}=4.04$, ${\ensuremath{\gamma}}_{2}=0.53$, and ${\ensuremath{\gamma}}_{3}=1.26$). Directly obtained information on the interaction between donors and acceptors characterizes the acceptor state and confirms observation of the $1{S}_{\frac{1}{2}}$ level.
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Valence-Band Parameters in Cubic Semiconductors
P. Lawaetz · Physical review. B, Solid state · 1971 · 1.1K citations
Pair Spectra and "Edge" Emission in Gallium Phosphide
D. G. Thomas, M. Gershenzon, F. A. Trumbore · Physical Review · 1964 · 374 citations