Laser-induced selective deposition of micron-size structures on silicon

Abstract

The feasibility of high speed direct writing of high resolution structures using a laser beam was demonstrated. Tungsten was selectively deposited on silicon via surface reduction reaction of tungsten hexafluoride. Fine lines of micron dimension with smooth surface morphology were fabricated using an argon laser at a writing speed of several cm per second. Compositions and structures of the micron-size lines, characterized using various microprobe analysis techniques including scanning Auger microprobe, Raman microprobe, and Rutherford microion-beam spectroscopy, are discussed.