Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition - Concepedia

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Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

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Citations

16

References

2003

Year

Shawn Thomas, Sushil Bharatan, Robert E. Jones, R. Thomä, Thomas E. Zirkle, N. V. Edwards, Ran Liu, Xiang Dong Wang, Qianghua Xie, C. Rosenblad,

Journal of Electronic Materials

Materials ScienceStructural CharacterizationEngineeringSi SubstratesHigh-quality Epitaxial GeApplied PhysicsSemiconductor Device FabricationMolecular Beam EpitaxySilicon On InsulatorEpitaxial GrowthChemical Vapor Deposition

References

	Year	Citations

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