Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

M. T. Currie, Srikanth Samavedam, T. A. Langdo et al. · Applied Physics Letters · 1998 · 551 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dislocations and strain relief in compositionally graded layers

J. Tersoff · Applied Physics Letters · 1993 · 322 citations

Natural Sciences, Materials Engineering, Materials Science +17

Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

Lorenzo Colace, G. Masini, Gaetano Assanto et al. · Applied Physics Letters · 2000 · 234 citations

Engineering, Electrical Engineering, Materials Science +17

New approach to the growth of low dislocation relaxed SiGe material

Adrian R. Powell, Subramanian S. Iyer, F. K. LeGoues · Applied Physics Letters · 1994 · 181 citations

Engineering, Materials Engineering, Materials Science +17

Correlation between leakage current density and threading dislocation density in SiGe <i>p-i-n</i> diodes grown on relaxed graded buffer layers

Laura M. Giovane, Hsin-Chiao Luan, Anu Agarwal et al. · Applied Physics Letters · 2001 · 174 citations

Engineering, Electrical Engineering, Materials Science +17