Sushil Bharatan - Concepedia

Author

Sushil Bharatan

Motorola (United States)

Also Known As

S. Bharatan, S.R. Bharatan, Sushil Bharatan

Publications

230

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)University of Florida ETH Zurich The University of Texas at Austin

About

Sushil Bharatan is an author at Motorola (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	200
2	Applied Physics	6	6	165
3	Electrical Engineering	3	3	100
4	Computer Engineering	1	1	35
5	Materials Engineering	1	1	33

Sushil Bharatan

Publications

200

Citations

H-Index

Page 1

	Year	Citations
Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers Jungwoo Oh, Joe C. Campbell, Shawn Thomas, IEEE Journal of Quantum Electronics Si SubstrateEngineeringGe Epitaxial LayerSilicon On InsulatorPhotodetectors	2002	50
Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition Shawn Thomas, Sushil Bharatan, Robert E. Jones, Journal of Electronic Materials Materials ScienceStructural CharacterizationEngineeringSi SubstratesHigh-quality Epitaxial Ge	2003	40
Comprehensive study of substrate noise isolation for mixed-signal circuits Kun-Hin To, P. Welch, Sushil Bharatan, Substrate Noise IsolationElectrical EngineeringEngineeringCircuit SystemMixed-signal Integrated Circuit	2002	35
Growth of AlN by metalorganic molecular beam epitaxy J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, Applied Physics Letters Materials ScienceMaterials EngineeringThin Film AlnAluminium NitrideEngineering	1995	33
Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD Robert E. Jones, Shawn Thomas, Sushil Bharatan, PhotonicsElectrical EngineeringSemiconductor DeviceEngineeringLow Energy Plasma	2003	15
Structural characterization of GaN and GaAs<i>x</i>N1−<i>x</i> grown by electron cyclotron resonance-metalorganic molecular beam epitaxy Sushil Bharatan, K. S. Jones, C. R. Abernathy, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films SemiconductorsMaterials ScienceStructural CharacterizationWide-bandgap SemiconductorEngineering	1994	15
Energy dependence of transient enhanced diffusion and defect kinetics Hugo Saleh, Mark E. Law, Sushil Bharatan, Applied Physics Letters Materials ScienceSemiconductor TechnologyEngineeringDissolution RateCrystalline Defects	2000	12

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