Sushil Bharatan

Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers

Jungwoo Oh, Joe C. Campbell, Shawn Thomas et al. · IEEE Journal of Quantum Electronics · 2002 · 50 citations

Si Substrate, Engineering, Ge Epitaxial Layer +16

Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition

Shawn Thomas, Sushil Bharatan, Robert E. Jones et al. · Journal of Electronic Materials · 2003 · 40 citations

Materials Science, Structural Characterization, Engineering +8

Comprehensive study of substrate noise isolation for mixed-signal circuits

Kun-Hin To, P. Welch, Sushil Bharatan et al. · 2002 · 35 citations

Substrate Noise Isolation, Electrical Engineering, Engineering +12

Growth of AlN by metalorganic molecular beam epitaxy

J. D. MacKenzie, C. R. Abernathy, S. J. Pearton et al. · Applied Physics Letters · 1995 · 33 citations

Materials Science, Materials Engineering, Thin Film Aln +10

Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

Robert E. Jones, Shawn Thomas, Sushil Bharatan et al. · 2003 · 15 citations

Photonics, Electrical Engineering, Semiconductor Device +12