Contrast in the dislocation images for the Bragg case

Abstract

In the image of the 30° dislocation in a silicon single crystal taken in the symmetrical Bragg case of X-ray diffraction an interference phenomenon is observed. The contrast produced by the pure edge dislocations is also noticed. All dislocations considered are perpendicular to the surface of the crystal plate. The topographs are taken by means of a double crystal spectrometer using the MoKα1 radiation. The method is extended by the exposure of the dislocation image simultaneously in the reflected and transmitted beams in the Bragg case.