Anhydrous Metal Nitrates as Volatile Single Source Precursors for the CVD of Metal Oxide Films

Abstract

Anhydrous metal nitrates are useful as single source precursors for CVD of metal oxide films. MOCVD of such films can lead to incorporation of carbon or hydrogen into the films, so single source precursors that cleave directly to metal oxide films with highly volatile byproducts are desirable. In this communication it is shown that, with relatively little optimization, anhydrous metal nitrates exhibit the necessary volatility and reactivity for CVD applications.