Simple technique for determination of centroid of nitride charge in MNOS structures

Abstract

A simple technique is proposed to determine the exact amount of charge in the nitride layer of MNOS structures and the centroid of its distribution throughout the layer. The technique is only significant for MNOS devices with a thick nitride layer. From experimental data it is shown, using this technique, that the charge is trapped deep into the nitride layer, to a depth depending on the initial nitride field.